Imaging Light‐Induced Migration of Dislocations in Halide Perovskites with 3D Nanoscale Strain Mapping
[1];
[1]
- Department of Chemical Engineering and Biotechnology University of Cambridge Philippa Fawcett Drive Cambridge CB3 0AS UK, Department of Physics Cavendish Laboratory University of Cambridge JJ Thomson Avenue Cambridge CB3 0HE UK
- London Centre for Nanotechnology University College London London WC1E 6BT UK
- KAUST Catalysis Center (KCC) Division of Physical Sciences and Engineering (PSE) King Abdullah University of Science and Technology (KAUST) 23955‐6900 Thuwal Kingdom of Saudi Arabia
- Diamond Light Source Harwell Science and Innovation Campus Fermi Ave Didcot OX11 0DE UK
- Department of Chemical Engineering and Biotechnology University of Cambridge Philippa Fawcett Drive Cambridge CB3 0AS UK
- Department of Chemical Engineering and Biotechnology University of Cambridge Philippa Fawcett Drive Cambridge CB3 0AS UK, Department of Physics Cavendish Laboratory University of Cambridge JJ Thomson Avenue Cambridge CB3 0HE UK, Department of Engineering University of Cambridge Cambridge CB2 1PZ UK
- Department of Chemical Engineering and Biotechnology University of Cambridge Philippa Fawcett Drive Cambridge CB3 0AS UK, Department of Physics Cavendish Laboratory University of Cambridge JJ Thomson Avenue Cambridge CB3 0HE UK, Department of Materials Science &, Metallurgy University of Cambridge 27 Charles Babbage Road Cambridge CB3 0FS UK
- Department of Engineering University of Cambridge Cambridge CB2 1PZ UK
- London Centre for Nanotechnology University College London London WC1E 6BT UK, Condensed Matter Physics and Materials Science Department Brookhaven National Lab Upton New York 11793 USA
Abstract In recent years, halide perovskite materials have been used to make high‐performance solar cells and light‐emitting devices. However, material defects still limit device performance and stability. Here, synchrotron‐based Bragg coherent diffraction imaging is used to visualize nanoscale strain fields, such as those local to defects, in halide perovskite microcrystals. Significant strain heterogeneity within MAPbBr 3 (MA = CH 3 NH 3 + ) crystals is found in spite of their high optoelectronic quality, and both 〈100〉 and 〈110〉 edge dislocations are identified through analysis of their local strain fields. By imaging these defects and strain fields in situ under continuous illumination, dramatic light‐induced dislocation migration across hundreds of nanometers is uncovered. Further, by selectively studying crystals that are damaged by the X‐ray beam, large dislocation densities and increased nanoscale strains are correlated with material degradation and substantially altered optoelectronic properties assessed using photoluminescence microscopy measurements. These results demonstrate the dynamic nature of extended defects and strain in halide perovskites, which will have important consequences for device performance and operational stability.
- Research Organization:
- Brookhaven National Laboratory (BNL), Upton, NY (United States)
- Sponsoring Organization:
- USDOE Office of Science (SC), Basic Energy Sciences (BES)
- Grant/Contract Number:
- SC0012704
- OSTI ID:
- 2202323
- Alternate ID(s):
- OSTI ID: 2004987; OSTI ID: 2202326
- Report Number(s):
- BNL-224809-2023-JAAM; 2305549
- Journal Information:
- Advanced Materials, Journal Name: Advanced Materials Vol. 35 Journal Issue: 46; ISSN 0935-9648
- Publisher:
- Wiley Blackwell (John Wiley & Sons)Copyright Statement
- Country of Publication:
- Germany
- Language:
- English
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