Features of a priori heavy doping of the n-TiNiSn intermetallic semiconductor

Journal Article · Fri Jul 15 00:00:00 EDT 2011 · Semiconductors

DOI:https://doi.org/10.1134/S1063782611070190· OSTI ID:22004782

Rogl, P ^[1]; Romaka, V V ^[2]; Hlil, E K ^[3]; Stadnyk, Yu V ^[4]; Budgerak, S M ^[2]

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1. Universitaet Wien, Institut fuer Physikalische Chemie (Austria)
2. National University Lvivska Politekhnika (Ukraine)
3. CNRS, Laboratoire de Neel (France)
4. Ivan Franko National University of Lviv (Ukraine)

The crystal structure, the distribution of electron density, and the energy, kinetic, and magnetic properties of the n-TiNiSn intermetallic semiconductor are investigated. It is shown that a priori doping of n-TiNiSn with donors originates from partial, up to 0.5 at %, redistribution of Ti and Ni atoms in crystallographic sites of Ti atoms. The correlation is established between the donor concentration, amplitude of modulation of the continuous energy bands, and degree of filling of low-scale fluctuation potential wells with charge carriers. The results obtained are discussed within the Shklovskii-Efros model of a heavily doped and compensated semiconductor.

• OSTI ID: 22004782
• Journal Information: Semiconductors, Vol. 45, Issue 7; Other Information: Copyright (c) 2011 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CHARGE CARRIERS
CRYSTAL STRUCTURE
CRYSTALLOGRAPHY
DISTRIBUTION
DOPED MATERIALS
ELECTRON DENSITY
MAGNETIC PROPERTIES
SEMICONDUCTOR MATERIALS