Diode lasers emitting at 1190 nm with a highly strained GaInAs quantum well and GaAsP compensating layers MOCVD-grown on a GaAs substrate

Journal Article · Thu Sep 15 00:00:00 EDT 2011 · Semiconductors

DOI:https://doi.org/10.1134/S1063782611090260· OSTI ID:22004731

Nikolaev, D N; Pikhtin, N A; Stankevich, A L; Shamakhov, V V; Bondarev, A D; Rudova, N A; Tarasov, I S ^[1]

---

1. Russian Academy of Sciences, Ioffe Physical-Technical Institute (Russian Federation)

Laser heterostructures with an active region consisting of a highly strained GaInAs quantum well located between GaAsP compensating layers were grown by metal-organic chemical vapor deposition on GaAs substrates. Stripe mesa-structure laser diodes of 100 {mu}m aperture emitting at 1190 nm were fabricated. The highest emission power of these diodes in the CW mode amounted to 4.5 W per output mirror. Due to the presence of compensating GaAsP barriers, the GaInAs quantum well remains unrelaxed, which eliminates the spread in the maximum emission power of laser diodes produced from the same heterostructure.

• OSTI ID: 22004731
• Journal Information: Semiconductors, Vol. 45, Issue 9; Other Information: Copyright (c) 2011 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
APERTURES
CHEMICAL VAPOR DEPOSITION
EMISSION
GALLIUM ARSENIDES
LASERS
LAYERS
ORGANOMETALLIC COMPOUNDS
QUANTUM WELLS
SUBSTRATES