Optical electron spin orientation in Ga-doped and undoped ZnO films

Journal Article · Fri Dec 23 00:00:00 EST 2011 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.3666581· OSTI ID:21612436

Tomimoto, Shinichi; Nozawa, Shinsuke; Masumoto, Yasuaki ^[1]; Kato, Hiroyuki; Sano, Michihiro; Matsumoto, Takahiro ^[2]

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1. Institute of Physics, University of Tsukuba, Tsukuba 305-8571 (Japan)
2. Research and Development Center, Stanley Electric Corporation, Tsukuba 300-2635 (Japan)

We have studied the optical orientation and polarization relaxation dynamics of electron spins in Ga-doped and undoped ZnO films by time-resolved Kerr rotation (TRKR). In the Ga-doped film, we have observed a long-lived spin signal more than 10 ns when the pump-probe energy is resonant to the neutral donor-bound excitons (D deg. X). It is not observed in the undoped film. Meanwhile, when the energy is resonant to free excitons, faster spin relaxation of about 2 ns is observed for itinerant electrons in both the films. The optical spin orientation is always parallel to the c-axis in the ZnO films, and independent of the pump incidence angle. This contrasts with the observation in crystals with the zincblende structure.

• OSTI ID: 21612436
• Journal Information: AIP Conference Proceedings, Vol. 1399, Issue 1; Conference: 30. international conference on the physics of semiconductors, Seoul (Korea, Republic of), 25-30 Jul 2010; Other Information: DOI: 10.1063/1.3666581; (c) 2011 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
36 MATERIALS SCIENCE
CRYSTAL GROWTH
CRYSTALS
DOPED MATERIALS
ELECTRONS
EXCITONS
FILMS
GALLIUM ADDITIONS
INCIDENCE ANGLE
KERR EFFECT
MAGNETO-OPTICAL EFFECTS
MOLECULAR BEAM EPITAXY
POLARIZATION
RELAXATION
ROTATION
SPIN
SPIN ORIENTATION
TIME RESOLUTION
ZINC OXIDES
ZINC SULFIDES
ALLOYS
ANGULAR MOMENTUM
CHALCOGENIDES
CRYSTAL GROWTH METHODS
DIELECTRIC PROPERTIES
ELECTRICAL PROPERTIES
ELEMENTARY PARTICLES
EPITAXY
FERMIONS
GALLIUM ALLOYS
INORGANIC PHOSPHORS
LEPTONS
MATERIALS
MOTION
ORIENTATION
OXIDES
OXYGEN COMPOUNDS
PARTICLE PROPERTIES
PHOSPHORS
PHYSICAL PROPERTIES
QUASI PARTICLES
RESOLUTION
SULFIDES
SULFUR COMPOUNDS
TIMING PROPERTIES
ZINC COMPOUNDS