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Title: Nano-structural Characteristics of N-doped ZnO Thin Films and Fabrication of Film Bulk Acoustic Resonator Devices

Journal Article · · AIP Conference Proceedings
DOI:https://doi.org/10.1063/1.3666352· OSTI ID:21612391
; ;  [1];  [2]
  1. Department of Electrical Engineering, KAIST, Daejeon (Korea, Republic of)
  2. Agency for Defense Development, Daejeon (Korea, Republic of)

N-doped ZnO thin films (ZnO:N) with c-axis preferred orientation were prepared on p-Si(100) wafers, using an RF magnetron sputter deposition. For ZnO deposition, N{sub 2}O gas was employed as a dopant source and various deposition conditions such as N{sub 2}O gas fraction and RF power were applied. In addition, the film bulk acoustic resonator (FBAR) devices with three kinds of top electrodes patterns were fabricated by using the N-doped ZnO thin films as the piezoelectric layers. The depth profiles of the nitrogen [N] atoms incorporated into the ZnO thin films were investigated by an Auger Electron Spectroscopy (AES) and the nano-scale structural characteristics of the N-doped ZnO (ZnO:N) thin films were also investigated by a scanning electron microscope (SEM) technique. The fabricated resonators were evaluated by measuring the return loss (S{sub 11}) characteristics using a probe station and E8361A PNA Network Analyzer.

OSTI ID:
21612391
Journal Information:
AIP Conference Proceedings, Vol. 1399, Issue 1; Conference: 30. international conference on the physics of semiconductors, Seoul (Korea, Republic of), 25-30 Jul 2010; Other Information: DOI: 10.1063/1.3666352; (c) 2011 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
Country of Publication:
United States
Language:
English