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Title: Effect of Boron doping on the electronic properties of the fullerenes of different sizes

Journal Article · · AIP Conference Proceedings
DOI:https://doi.org/10.1063/1.3653659· OSTI ID:21612345
 [1];  [2]
  1. Department of Applied Sciences, Rayat and Bahra Institute of Engg. and Biotechnology, Sahauran, Mohali, Punjab 140104 (India)
  2. Department of Physics, Punjab Technical University, Jalandhar, Punjab 144601 (India)

We report the results of the effect of Boron doping in C{sub n}; n = 28, 32, 36, 40, 44, 50 and 60 using the first principle calculation based on density functional theory. The HOMO-LUMO gap changes significantly with the decreasing fullerene size below C{sub 60}, with maximum gap observed for C{sub 32}. The HOMO-LUMO gap of Boron doped fullerenes varies significantly w.r.t. pure fullerenes. Also, the gap decreases for C{sub n-m}B{sub m}X, the boron doped fullerenes with exohedral alkali metals for n = 28, 32, 36, 40, 44, 50 and 60; m = 1 to 4; X = Li, Na and K. The Mulliken charge transfer from the exohedral alkali metals towards the various fullerene cages is altered marginally by the boron doping in fullerenes and follows the order K>Na>Li.

OSTI ID:
21612345
Journal Information:
AIP Conference Proceedings, Vol. 1393, Issue 1; Conference: ICACNM-2011: International conference on advances in condensed and nano materials, Chandigarh (India), 23-26 Feb 2011; Other Information: DOI: 10.1063/1.3653659; (c) 2011 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
Country of Publication:
United States
Language:
English