Annealed Si/SiGeC Superlattices Studied by Dark-Field Electron Holography, ToF-SIMS and Infrared Spectroscopy

Journal Article · Thu Nov 10 00:00:00 EST 2011 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.3657874· OSTI ID:21612169

Denneulin, T; Py, M; Barnes, J P; Rochat, N; Hartmann, J M; Cooper, D ^[1]; Rouviere, J L ^[2]; Beche, A ^[1]

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1. CEA-LETI, Minatec Campus, 17 rue des Martyrs, 38054 Grenoble Cedex 9 (France)
2. CEA-INAC/UJF-Grenoble1 UMR-E, SP2M, LEMMA, 17 rue des Martyrs, Minatec Grenoble, 38054 (France)

Si/SiGeC superlattices are used in the construction of new generation devices such as multichannel transistors. The incorporation of C in the SiGe layers allows for a better control of the strain and the Ge content. However the formation of {beta}-SiC clusters during annealing at high temperature limits the thermal stability of the alloy. It leads to a strong modification of the strain due to the reduction of the substitutional carbon content. Here, we investigated the behavior of Si/SiGeC superlattices that have been annealed using different characterization techniques: dark-field electron holography for the evaluation of strain; infrared spectroscopy and ToF-SIMS for the determination of the composition. It was found that after annealing at 1050 deg. C, the reduction of the substitutional C proportion leads to a recovery of the perpendicular strain in the superlattice. It was also proposed that the local arrangement of C atoms in a third nearest neighbor configuration is an intermediary step during the formation of the SiC clusters.

• OSTI ID: 21612169
• Journal Information: AIP Conference Proceedings, Vol. 1395, Issue 1; Conference: Conference on frontiers of characterization and metrology for nanoelectronics 2011, Grenoble (France), 23-26 May 2011; Other Information: DOI: 10.1063/1.3657874; (c) 2011 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ABSORPTION SPECTROSCOPY
ANNEALING
CRYSTAL GROWTH
ELECTRONS
GERMANIUM SILICIDES
INFRARED SPECTRA
INTERFACES
LAYERS
MASS SPECTROSCOPY
PHASE STABILITY
SILICON
SILICON ALLOYS
SILICON CARBIDES
STRAINS
SUPERLATTICES
ALLOYS
CARBIDES
CARBON COMPOUNDS
ELEMENTARY PARTICLES
ELEMENTS
FERMIONS
GERMANIUM COMPOUNDS
HEAT TREATMENTS
LEPTONS
SEMIMETALS
SILICIDES
SILICON COMPOUNDS
SPECTRA
SPECTROSCOPY
STABILITY