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Title: Metastable tetragonal structure of Fe{sub 100-x}Ga{sub x} epitaxial thin films on ZnSe/GaAs(001) substrate

Journal Article · · Physical Review. B, Condensed Matter and Materials Physics

We investigated by x-ray diffraction the Ga concentration dependences of the structural properties of Fe{sub 100-x}Ga{sub x} (galfenol) thin films grown on a ZnSe/GaAs(001) substrate, a material known for its high magnetostriction. By molecular beam epitaxy (MBE) we grew a series of (001)-oriented layers without in-plane misorientation, ranging from pure Fe up to x=29.4% Ga. We find a strong Ga-induced tetragonal distortion that conserves the pristine Fe in-plane lattice parameters for all Ga compositions. Supported by theoretical predictions [R. Wu, J. Appl. Phys. 91, 7358 (2002)], we attribute this unusual tetragonal distortion to short-range ordering of Ga-Ga pairs along the [001]-growth direction. The low-temperature and out-of-equilibrium MBE growth regime tends to stabilize a strong deformed tetragonal phase (up to c/a{approx}1.05 for x{approx}29%). This tetragonal structure is fully released by postgrowth annealing.

OSTI ID:
21596906
Journal Information:
Physical Review. B, Condensed Matter and Materials Physics, Vol. 84, Issue 16; Other Information: DOI: 10.1103/PhysRevB.84.161410; (c) 2011 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 1098-0121
Country of Publication:
United States
Language:
English