Electroluminescence of ZnO-based semiconductor heterostructures

Journal Article · Mon Jan 31 00:00:00 EST 2011 · Quantum Electronics (Woodbury, N.Y.)

DOI:https://doi.org/10.1070/QE2011V041N01ABEH014421· OSTI ID:21541788

Novodvorskii, O A; Lotin, A A; Panchenko, Vladislav Ya; Parshina, L S; Khaidukov, E V; Zuev, D A; Khramova, O D ^[1]

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1. Institute on Laser and Information Technologies, Russian Academy of Sciences, Shatura, Moscow Region (Russian Federation)

Using pulsed laser deposition, we have grown n-ZnO/p-GaN, n-ZnO/i-ZnO/p-GaN and n-ZnO/n-Mg{sub 0.2}Zn{sub 0.8}O/i-Cd{sub 0.2}Zn{sub 0.8}O/p-GaN light-emitting diode (LED) heterostructures with peak emission wavelengths of 495, 382 and 465 nm and threshold current densities (used in electroluminescence measurements) of 1.35, 2, and 0.48 A cm{sup -2}, respectively. Because of the spatial carrier confinement, the n-ZnO/n-Mg{sub 0.2}Zn{sub 0.8}O/i-Cd{sub 0.2}Zn{sub 0.8}O/p-GaN double heterostructure LED offers a higher electroluminescence intensity and lower electroluminescence threshold in comparison with the n-ZnO/p-GaN and n-ZnO/i-ZnO/p-GaN LEDs. (lasers)

• OSTI ID: 21541788
• Journal Information: Quantum Electronics (Woodbury, N.Y.), Vol. 41, Issue 1; Other Information: DOI: 10.1070/QE2011v041n01ABEH014421; ISSN 1063-7818
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
COMPARATIVE EVALUATIONS
ELECTROLUMINESCENCE
ENERGY BEAM DEPOSITION
GALLIUM NITRIDES
LASER RADIATION
LIGHT EMITTING DIODES
PULSED IRRADIATION
SEMICONDUCTOR MATERIALS
THRESHOLD CURRENT
ZINC OXIDES
CHALCOGENIDES
CURRENTS
DEPOSITION
ELECTRIC CURRENTS
ELECTROMAGNETIC RADIATION
EMISSION
EVALUATION
GALLIUM COMPOUNDS
IRRADIATION
LUMINESCENCE
MATERIALS
NITRIDES
NITROGEN COMPOUNDS
OXIDES
OXYGEN COMPOUNDS
PHOTON EMISSION
PNICTIDES
RADIATIONS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SURFACE COATING
ZINC COMPOUNDS