Origins of low resistivity in Al ion-implanted ZnO bulk single crystals

Journal Article · Wed Jun 15 00:00:00 EDT 2011 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.3600072· OSTI ID:21538445

Oga, T; Izawa, Y; Kuriyama, K ^[1]; Kushida, K ^[2]; Kinomura, A ^[3]

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1. College of Engineering and Research Center of Ion Beam Technology, Hosei University, Koganei, Tokyo 184-8584 (Japan)
2. Departments of Arts and Sciences, Osaka Kyoiku University, Kashiwara, Osaka 582-8582 (Japan)
3. National Institute of Advanced Industrial Science and Technology, Tsukuba, Ibaraki 305-8568 (Japan)

The origins of low resistivity in Al ion-implanted ZnO bulk single crystals are studied by combining Rutherford backscattering spectroscopy (RBS), nuclear reaction analysis (NRA), photoluminescence (PL), and Van der Pauw methods. The Al-ion implantation (peak concentration: 2.6 x 10{sup 20}cm{sup -3}) into ZnO is performed using a multiple-step energy. The resistivity decreases from {approx}10{sup 4{Omega}} cm for un-implanted ZnO to 1.4 x 10{sup -1{Omega}} cm for as-implanted, and reaches 6.0 x 10{sup -4{Omega}} cm for samples annealed at 1000 deg. C. RBS and NRA measurements for as-implanted ZnO suggest the existence of the lattice displacement of Zn (Zn{sub i}) and O (O{sub i}), respectively. After annealing at 1000 deg. C, the Zn{sub i} related defects remain and the O{sub i} related defects disappear. The origin of the low resistivity in the as-implanted sample is attributed to the Zn{sub i} ({approx}30 meV [Look et al., Phys. Rev. Lett. 82, 2552 (1999)]). In contrast, the origin of the low resistivity in the sample annealed at 1000 deg. C is assigned to both of the Zn{sub i} related defects and the electrically activated Al donor. A new PL emission appears at around 3.32 eV after annealing at 1000 deg. C, suggesting electrically activated Al donors.

• OSTI ID: 21538445
• Journal Information: Journal of Applied Physics, Vol. 109, Issue 12; Other Information: DOI: 10.1063/1.3600072; (c) 2011 American Institute of Physics; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
36 MATERIALS SCIENCE
ACCURACY
ALUMINIUM IONS
ANNEALING
CRYSTAL DEFECTS
ELECTRIC CONDUCTIVITY
EXTERNAL IRRADIATION
ION IMPLANTATION
MONOCRYSTALS
NUCLEAR REACTION ANALYSIS
PHOTOLUMINESCENCE
PHYSICAL RADIATION EFFECTS
RUTHERFORD BACKSCATTERING SPECTROSCOPY
SEMICONDUCTOR MATERIALS
ZINC OXIDES
CHALCOGENIDES
CHARGED PARTICLES
CHEMICAL ANALYSIS
CRYSTAL STRUCTURE
CRYSTALS
ELECTRICAL PROPERTIES
EMISSION
HEAT TREATMENTS
IONS
IRRADIATION
LUMINESCENCE
MATERIALS
NONDESTRUCTIVE ANALYSIS
OXIDES
OXYGEN COMPOUNDS
PHOTON EMISSION
PHYSICAL PROPERTIES
RADIATION EFFECTS
SPECTROSCOPY
ZINC COMPOUNDS