Optical investigation of InAs quantum dots inserted in AlGaAs/GaAs modulation doped heterostructure

Journal Article · Tue Mar 01 00:00:00 EST 2011 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.3555100· OSTI ID:21538152

Khmissi, H; Baira, M; Bouzaieene, L; Saidi, F; Maaref, H ^[1]; Sfaxi, L ^[1]; Bru-Chevallier, C ^[2]

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1. Laboratoire de Micro-optoelectronique et Nanostructures, Universite de Monastir (Tunisia)
2. Institut des Nanotechnologies de Lyon (INL), CNRS UMR-5270, INSA-LYON, 7, Avenue Jean Capelle, Bat. Blaise Pascal, 69621 Villeurbanne (France)

Optical properties of InAs quantum dots (QDs) inserted in AlGaAs/GaAs modulation doped heterostructure are investigated. To study the effect of carrier transfer behavior on the luminescence of self-assembled quantum dots, a series of sample has been prepared using molecular beam epitaxy (Riber 32 system) in which we have varied the thickness separating the delta dopage and the InAs quantum dots layer. Photoluminescence spectra show the existence of two peaks that can be attributed to transition energies from the ground state (E{sub 1}-HH{sub 1}) and the first excited state (E{sub 2}-HH{sub 2}). Two antagonist effects have been observed, a blue shift of the emission energies result from electron transferred from the AlGaAs/GaAs heterojunction to the InAs quantum dots and a red shift caused by the quantum confined Stark effect due to the internal electric field existing In the AlGaAs/GaAs heterojunction.

• OSTI ID: 21538152
• Journal Information: Journal of Applied Physics, Vol. 109, Issue 5; Other Information: DOI: 10.1063/1.3555100; (c) 2011 American Institute of Physics; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
77 NANOSCIENCE AND NANOTECHNOLOGY
ALUMINIUM COMPOUNDS
DOPED MATERIALS
ELECTRON TRANSFER
GALLIUM ARSENIDES
HETEROJUNCTIONS
INDIUM ARSENIDES
LAYERS
MOLECULAR BEAM EPITAXY
OPTICAL PROPERTIES
PHOTOLUMINESCENCE
QUANTUM DOTS
RED SHIFT
SEMICONDUCTOR MATERIALS
SPECTRA
STABILITY
STARK EFFECT
STIMULATION
THICKNESS
ARSENIC COMPOUNDS
ARSENIDES
CRYSTAL GROWTH METHODS
DIMENSIONS
EMISSION
EPITAXY
GALLIUM COMPOUNDS
INDIUM COMPOUNDS
LUMINESCENCE
MATERIALS
NANOSTRUCTURES
PHOTON EMISSION
PHYSICAL PROPERTIES
PNICTIDES
SEMICONDUCTOR JUNCTIONS