Molecular beam epitaxial growth of metamorphic AlInSb/GaInSb high-electron-mobility-transistor structures on GaAs substrates for low power and high frequency applications

Journal Article · Tue Feb 01 00:00:00 EST 2011 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.3544041· OSTI ID:21538082

Loesch, R; Aidam, R; Kirste, L; Leuther, A ^[1]

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1. Fraunhofer Institute for Applied Solid-State Physics (IAF), Tullastrasse 72, 79108 Freiburg (Germany)

We report on molecular beam epitaxial growth of AlInSb/GaInSb metamorphic high-electron-mobility-transistor structures for low power, high frequency applications on 4 in. GaAs substrates. The structures consist of a Ga{sub 0.4}In{sub 0.6}Sb channel embedded in Al{sub 0.4}In{sub 0.6}Sb barrier layers which are grown on top of an insulating metamorphic buffer, which is based on the linear exchange of Ga versus In and a subsequent exchange of As versus Sb. Precise control of group V fluxes and substrate temperature in the Al{sub 0.4}In{sub 0.6}As{sub 1-x}Sb{sub x} buffer is essential to achieve high quality device structures. Good morphological properties were achieved demonstrated by the appearance of crosshatching and root mean square roughness values of 2.0 nm. Buffer isolation is found to be >100 k{Omega}/{open_square} for optimized growth conditions. Hall measurements at room temperature reveal electron densities of 2.8x10{sup 12} cm{sup -2} in the channel at mobility values of 21.000 cm{sup 2}/V s for single-sided Te volume doping and 5.4x10{sup 12} cm{sup -2} and 17.000 cm{sup 2}/V s for double-sided Te {delta}-doping, respectively.

• OSTI ID: 21538082
• Journal Information: Journal of Applied Physics, Vol. 109, Issue 3; Other Information: DOI: 10.1063/1.3544041; (c) 2011 American Institute of Physics; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALUMINIUM COMPOUNDS
ANTIMONY COMPOUNDS
BUFFERS
ELECTRON DENSITY
ELECTRON MOBILITY
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GAMMA RADIATION
INDIUM COMPOUNDS
MOLECULAR BEAM EPITAXY
ROUGHNESS
SEMICONDUCTOR MATERIALS
SUBSTRATES
SURFACES
TEMPERATURE RANGE 0273-0400 K
TERNARY ALLOY SYSTEMS
TRANSISTORS
ALLOY SYSTEMS
ARSENIC COMPOUNDS
ARSENIDES
CRYSTAL GROWTH METHODS
ELECTROMAGNETIC RADIATION
EPITAXY
IONIZING RADIATIONS
MATERIALS
MOBILITY
PARTICLE MOBILITY
PNICTIDES
RADIATIONS
SEMICONDUCTOR DEVICES
SURFACE PROPERTIES
TEMPERATURE RANGE