skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Improved tunneling magnetoresistance at low temperature in manganite junctions grown by molecular beam epitaxy

Journal Article · · Applied Physics Letters
DOI:https://doi.org/10.1063/1.3581885· OSTI ID:21518399
; ;  [1]; ;  [2];  [3]
  1. Physikalisches Institut-Experimentalphysik II, Universitaet Tuebingen, Auf der Morgenstelle 14, 72076 Tuebingen (Germany)
  2. TASC National Laboratory, CNR-IOM, S.S. 14 Km 163.5 in AREA Science Park, 34012 Basovizza, Trieste (Italy)
  3. Universidad Nacional de Colombia, Sede Manizales, Cra 27 64-60 Manizales (Colombia)

We report resistance versus magnetic field measurements for a La{sub 0.65}Sr{sub 0.35}MnO{sub 3}/SrTiO{sub 3}/La{sub 0.65}Sr{sub 0.35}MnO{sub 3} tunnel junction grown by molecular-beam epitaxy, that show a large field window of extremely high tunneling magnetoresistance (TMR) at low temperature. Scanning the in-plane applied field orientation through 360 deg., the TMR shows fourfold symmetry, i.e., biaxial anisotropy, aligned with the crystalline axis but not the junction geometrical long axis. The TMR reaches {approx}1900% at 4 K, corresponding to an interfacial spin polarization of >95% assuming identical interfaces. These results show that uniaxial anisotropy is not necessary for large TMR, and lay the groundwork for future improvements in TMR in manganite junctions.

OSTI ID:
21518399
Journal Information:
Applied Physics Letters, Vol. 98, Issue 16; Other Information: DOI: 10.1063/1.3581885; (c) 2011 American Institute of Physics; ISSN 0003-6951
Country of Publication:
United States
Language:
English