Power Conversion Efficiency of AlGaAs/GaAs Schottky Diode for Low-Power On-Chip Rectenna Device Application

Journal Article · Wed May 25 00:00:00 EDT 2011 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.3586982· OSTI ID:21513227

Mustafa, Farahiyah; Hashim, Abdul Manaf; Rahman, Shaharin Fadzli Abd ^[1]; Osman, Mohd Nizam ^[2]

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1. Material Innovations and Nanoelectronics Research Group, Faculty of Electrical Engineering, Universiti Teknologi Malaysia, 81310 Skudai (Malaysia)
2. Telekom Research and Development, TM Innovation Centre, 63000 Cyberjaya (Malaysia)

A Schottky diode has been designed and fabricated on n-AlGaAs/GaAs high-electron-mobility-transistor (HEMT) structure. Current-voltage (I-V) measurements show good device rectification with a Schottky barrier height of 0.4349 eV for Ni/Au metallization. The differences of Schottky barrier height from theoretical value are due to the fabrication process and smaller contact area. The RF signals up to 1 GHz are well rectified by the fabricated Schottky diodes and stable DC output voltage is obtained. Power conversion efficiency up to 50% is obtained at 1 GHz with series connection between diode and load. The fabricated the n-AlGaAs/GaAs Schottky diode provide conduit for breakthrough designs for ultra-low power on-chip rectenna device technology to be integrated in nanosystems.

• OSTI ID: 21513227
• Journal Information: AIP Conference Proceedings, Vol. 1341, Issue 1; Conference: Escinano2010: 2010 international conference on enabling science and nanotechnology, Kuala Lumpur (Malaysia), 1-3 Dec 2010; Other Information: DOI: 10.1063/1.3586982; (c) 2011 American Institute of Physics; ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
CONVERSION
EFFICIENCY
ELECTRIC CONDUCTIVITY
ELECTRIC POTENTIAL
ELECTRON MOBILITY
ELECTRONS
FABRICATION
GALLIUM ARSENIDES
GHZ RANGE
N-TYPE CONDUCTORS
SCHOTTKY BARRIER DIODES
TRANSISTORS
ARSENIC COMPOUNDS
ARSENIDES
ELECTRICAL PROPERTIES
ELEMENTARY PARTICLES
FERMIONS
FREQUENCY RANGE
GALLIUM COMPOUNDS
LEPTONS
MATERIALS
MOBILITY
PARTICLE MOBILITY
PHYSICAL PROPERTIES
PNICTIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SEMICONDUCTOR MATERIALS