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Title: Intrinsic ferromagnetic properties in Cr-doped ZnO diluted magnetic semiconductors

Journal Article · · Journal of Solid State Chemistry
OSTI ID:21494298
 [1];  [1]; ; ; ; ; ; ; ;  [1]
  1. Institute of Condensed State Physics, Jilin Normal University, Siping 136000 (China)

The Cr-doped zinc oxide (Zn{sub 1-x}Cr{sub x}O, 0{<=}x{<=}0.08) diluted magnetic semiconductors have been synthesized successfully by the sol-gel method. Investigations on magnetic, optical and structural properties of the produced samples have been done. Energy dispersive spectroscopy (EDS) shows the existence of Cr ion in the Cr-doped ZnO. The results of X-ray diffraction (XRD), the transmission electron microscope (TEM), X-ray photoelectron spectroscopy (XPS) and X-ray absorption fine structure (XAFS) indicate that the Cr ions are at least partially substitutionally incorporated into the crystal lattice of ZnO. The produced samples show good high-T{sub c} (Curie temperature) ferromagnetism (FM) in Cr-doped ZnO nanoparticles with Cr concentration of less than 5 at%. The results of photoluminescence (PL) further testify that FM is an intrinsic property of the Cr-doped ZnO nanoparticles. And the occurrence of FM should mainly contribute to the Cr doping. -- Graphical Abstract: As can be seen from the magnetic hysteresis loops of Zn{sub 1-x}Cr{sub x}O (x=0.01, 0.03, 0.05, and 0.08) at room temperature under 10 KOe, the samples show good high-T{sub c} ferromagnetism with Cr concentration of less than 5 at%. Display Omitted Highlights: {yields} Zn{sub 1-x}Cr{sub x}O(0{<=}x{<=}0.08) nanoparticles are successfully synthesized by sol-gel method. {yields} The Cr ions are substitutionally incorporated into the crystal lattice of ZnO. {yields} The Cr-doped ZnO nanoparticles show good high-T{sub c} ferromagnetism. {yields} The ferromagnetism is an intrinsic property of the Cr-doped ZnO nanoparticles.

OSTI ID:
21494298
Journal Information:
Journal of Solid State Chemistry, Vol. 184, Issue 5; Other Information: DOI: 10.1016/j.jssc.2011.03.049; PII: S0022-4596(11)00160-5; Copyright (c) 2011 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.; ISSN 0022-4596
Country of Publication:
United States
Language:
English

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