Analysis of the degradation induced by focused ion Ga{sup 3+} beam for the realization of piezoelectric nanostructures

Journal Article · Sun Aug 15 00:00:00 EDT 2010 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.3474963· OSTI ID:21476411

Remiens, D; Liang, R H ^[1]; Soyer, C; Deresmes, D; Troadec, D; Quignon, S ^[2]; Da Costa, A; Desfeux, R ^[3]

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1. Shanghai Institute of Ceramics, Chinese Academy of Sciences, SICCAS, 1295 Dingxi Road, Shanghai 200050 (China)
2. Departement d'Opto Acousto Electronique (DOAE), MIMM Team, Institut d'Electronique, de Micro electronique et de Nano technologies (IEMN), CNRS-UMR 8520, Batiment P3, Cite Scientifique, 59665 Villeneuve d'Ascq Cedex (France)
3. Unite de Catalyse et de Chimie du Solide (UCCS), CNRS-UMR 8181, Faculte des Sciences Jean Perrin, Universite d'Artois, SP 18, 62307 Lens Cedex (France)

Piezoelectric nanostructures (islands of dimensions in the lateral size range 50-500 nm) have been fabricated by focused Ga{sup 3+} ion beam (FIB) etching on PbZr{sub 0.54}Ti{sub 0.46}O{sub 3} thin films obtained by magnetron sputtering. The degradation induced by the etching process is investigated through the evolution of electromechanical activity measured by means of local piezoelectric hysteresis loops produced by piezoresponse force microscopy. The analysis of surface potential is performed by kelvin force microscopy and the measurement of current-voltage curves is carried out by conducting atomic force microscopy. Two kinds of structures, namely one based on crystallized films and the other based on amorphous ones, were studied. In this latter case, the amorphous films are postannealed after etching to obtain crystallized structure. For the structures based on the crystallized and then etched films, no piezoelectric signal was registered that evidences a serious degradation of material induced by Ga{sup 3+} ion implantation. For the structures based on the films etched in amorphous state and then crystallized, the piezoresponse signal was near to that of the reference films (crystallized and not etched) whatever were the ion dose and the island dimensions. Even for very small lateral size (50 nm), no size effect was observed. The island shapes fabricated by Ga{sup 3+} FIB etching process (islands with less than 50 nm lateral size) show a limitation of FIB processing and electron beam lithography seems to be necessary.

• OSTI ID: 21476411
• Journal Information: Journal of Applied Physics, Vol. 108, Issue 4; Other Information: DOI: 10.1063/1.3474963; (c) 2010 American Institute of Physics; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
77 NANOSCIENCE AND NANOTECHNOLOGY
AMORPHOUS STATE
ATOMIC FORCE MICROSCOPY
CRYSTAL STRUCTURE
ELECTRIC CONDUCTIVITY
ELECTRON BEAMS
ETCHING
GALLIUM IONS
HYSTERESIS
ION BEAMS
ION IMPLANTATION
NANOSTRUCTURES
PHYSICAL RADIATION EFFECTS
PIEZOELECTRICITY
PZT
SPUTTERING
SURFACE POTENTIAL
THIN FILMS
BEAMS
CHARGED PARTICLES
ELECTRICAL PROPERTIES
ELECTRICITY
FILMS
IONS
LEAD COMPOUNDS
LEPTON BEAMS
MICROSCOPY
OXYGEN COMPOUNDS
PARTICLE BEAMS
PHYSICAL PROPERTIES
POTENTIALS
RADIATION EFFECTS
SURFACE FINISHING
TITANATES
TITANIUM COMPOUNDS
TRANSITION ELEMENT COMPOUNDS
ZIRCONATES
ZIRCONIUM COMPOUNDS