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Title: Influence of the matrix properties on the performances of Er-doped Si nanoclusters light emitting devices

Journal Article · · Journal of Applied Physics
DOI:https://doi.org/10.1063/1.3319581· OSTI ID:21476389
; ;  [1]; ; ;  [1]; ;  [2]
  1. CNR-IMM MATIS, Via Santa Sofia 64, 95123 Catania (Italy)
  2. STMicroelectronics, Stradale Primosole 50, 95121 Catania (Italy)

We investigated the properties of light emitting devices whose active layer consists of Er-doped Si nanoclusters (nc) generated by thermal annealing of Er-doped SiO{sub x} layers prepared by magnetron cosputtering. Differently from a widely used technique such as plasma enhanced chemical vapor deposition, sputtering allows to synthesize Er-doped Si nc embedded in an almost stoichiometric oxide matrix, so as to deeply influence the electroluminescence properties of the devices. Relevant results include the need for an unexpected low Si excess for optimizing the device efficiency and, above all, the strong reduction of the influence of Auger de-excitation, which represents the main nonradiative path which limits the performances of such devices and their application in silicon nanophotonics.

OSTI ID:
21476389
Journal Information:
Journal of Applied Physics, Vol. 107, Issue 5; Other Information: DOI: 10.1063/1.3319581; (c) 2010 American Institute of Physics; ISSN 0021-8979
Country of Publication:
United States
Language:
English