Influence of the matrix properties on the performances of Er-doped Si nanoclusters light emitting devices
- CNR-IMM MATIS, Via Santa Sofia 64, 95123 Catania (Italy)
- STMicroelectronics, Stradale Primosole 50, 95121 Catania (Italy)
We investigated the properties of light emitting devices whose active layer consists of Er-doped Si nanoclusters (nc) generated by thermal annealing of Er-doped SiO{sub x} layers prepared by magnetron cosputtering. Differently from a widely used technique such as plasma enhanced chemical vapor deposition, sputtering allows to synthesize Er-doped Si nc embedded in an almost stoichiometric oxide matrix, so as to deeply influence the electroluminescence properties of the devices. Relevant results include the need for an unexpected low Si excess for optimizing the device efficiency and, above all, the strong reduction of the influence of Auger de-excitation, which represents the main nonradiative path which limits the performances of such devices and their application in silicon nanophotonics.
- OSTI ID:
- 21476389
- Journal Information:
- Journal of Applied Physics, Vol. 107, Issue 5; Other Information: DOI: 10.1063/1.3319581; (c) 2010 American Institute of Physics; ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
77 NANOSCIENCE AND NANOTECHNOLOGY
ANNEALING
CHEMICAL VAPOR DEPOSITION
DE-EXCITATION
DOPED MATERIALS
ELECTROLUMINESCENCE
ERBIUM
LAYERS
MATRIX MATERIALS
NANOSTRUCTURES
PLASMA
SEMICONDUCTOR MATERIALS
SILICON
SILICON OXIDES
SPUTTERING
STOICHIOMETRY
VISIBLE RADIATION
CHALCOGENIDES
CHEMICAL COATING
DEPOSITION
ELECTROMAGNETIC RADIATION
ELEMENTS
EMISSION
ENERGY-LEVEL TRANSITIONS
HEAT TREATMENTS
LUMINESCENCE
MATERIALS
METALS
OXIDES
OXYGEN COMPOUNDS
PHOTON EMISSION
RADIATIONS
RARE EARTHS
SEMIMETALS
SILICON COMPOUNDS
SURFACE COATING