808-nm laser diode bars based on epitaxially stacked double heterostructures

Journal Article · Fri Oct 15 00:00:00 EDT 2010 · Quantum Electronics (Woodbury, N.Y.)

DOI:https://doi.org/10.1070/QE2010V040N08ABEH014366· OSTI ID:21471291

Davydova, Evgeniya I; Konyaev, V P; Ladugin, M A; Lebedeva, E I; Marmalyuk, Aleksandr A; Padalitsa, A A; Petrov, S V; Sapozhnikov, S M; Simakov, V A; Uspenskii, Mikhail B; Yarotskaya, I V ^[1]

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1. M.F. Stel'makh Polyus Research and Development Institute, Moscow (Russian Federation)

We have fabricated and investigated linear arrays of single laser diodes (LDs) and epitaxially stacked double LDs based on AlGaAs/GaAs heterostructures emitting in the 808-nm range. The power - current characteristic of the double-LD bars has a slope of 2.18 W A{sup -1}, which is almost twice that of the single-LD bars (1.16 W A{sup -1}). The voltage drop across the former bars is also larger. At a pump current of 60 A, the output power of 5-mm-long arrays of LDs based on epitaxially stacked double heterostructures is 100 W under quasi-cw pumping, which is a factor of 1.8 above that of the single-LD bars under identical conditions. (lasers)

• OSTI ID: 21471291
• Journal Information: Quantum Electronics (Woodbury, N.Y.), Vol. 40, Issue 8; Other Information: DOI: 10.1070/QE2010v040n08ABEH014366; ISSN 1063-7818
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
ALUMINIUM ARSENIDES
CURRENTS
ELECTRICAL PUMPING
EPITAXY
GALLIUM ARSENIDES
LASERS
SEMICONDUCTOR DIODES
VOLTAGE DROP
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CRYSTAL GROWTH METHODS
GALLIUM COMPOUNDS
PNICTIDES
PUMPING
SEMICONDUCTOR DEVICES