AlN thin films grown on epitaxial 3C-SiC (100) for piezoelectric resonant devices
- Department of Mechanical Engineering, University of California, Berkeley, California 94720 (United States)
- Berkeley Sensor and Actuator Center, University of California, Berkeley, California 94720 (United States)
- OEM Group Incorporated, Gilbert, Arizona 85233 (United States)
Highly c-axis oriented heteroepitaxial aluminum nitride (AlN) films were grown on epitaxial cubic silicon carbide (3C-SiC) layers on Si (100) substrates using alternating current reactive magnetron sputtering at temperatures between approximately 300-450 deg. C. The AlN films were characterized by x-ray diffraction, scanning electron microscope, and transmission electron microscopy. A two-port surface acoustic wave device was fabricated on the AlN/3C-SiC/Si composite structure, and an expected Rayleigh mode exhibited a high acoustic velocity of 5200 m/s. The results demonstrate the potential of utilizing AlN films on epitaxial 3C-SiC layers to create piezoelectric resonant devices.
- OSTI ID:
- 21466998
- Journal Information:
- Applied Physics Letters, Vol. 97, Issue 14; Other Information: DOI: 10.1063/1.3495782; (c) 2010 American Institute of Physics; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
36 MATERIALS SCIENCE
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ALTERNATING CURRENT
ALUMINIUM NITRIDES
CRYSTAL GROWTH
DEPOSITION
EPITAXY
LAYERS
PIEZOELECTRICITY
RAYLEIGH WAVES
SCANNING ELECTRON MICROSCOPY
SEMICONDUCTOR MATERIALS
SILICON
SILICON CARBIDES
SOUND WAVES
SPUTTERING
SUBSTRATES
SURFACES
THIN FILMS
TRANSMISSION ELECTRON MICROSCOPY
X-RAY DIFFRACTION
ALUMINIUM COMPOUNDS
CARBIDES
CARBON COMPOUNDS
COHERENT SCATTERING
CRYSTAL GROWTH METHODS
CURRENTS
DIFFRACTION
ELECTRIC CURRENTS
ELECTRICITY
ELECTRON MICROSCOPY
ELEMENTS
FILMS
MATERIALS
MICROSCOPY
NITRIDES
NITROGEN COMPOUNDS
PNICTIDES
SCATTERING
SEMIMETALS
SILICON COMPOUNDS
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ALTERNATING CURRENT
ALUMINIUM NITRIDES
CRYSTAL GROWTH
DEPOSITION
EPITAXY
LAYERS
PIEZOELECTRICITY
RAYLEIGH WAVES
SCANNING ELECTRON MICROSCOPY
SEMICONDUCTOR MATERIALS
SILICON
SILICON CARBIDES
SOUND WAVES
SPUTTERING
SUBSTRATES
SURFACES
THIN FILMS
TRANSMISSION ELECTRON MICROSCOPY
X-RAY DIFFRACTION
ALUMINIUM COMPOUNDS
CARBIDES
CARBON COMPOUNDS
COHERENT SCATTERING
CRYSTAL GROWTH METHODS
CURRENTS
DIFFRACTION
ELECTRIC CURRENTS
ELECTRICITY
ELECTRON MICROSCOPY
ELEMENTS
FILMS
MATERIALS
MICROSCOPY
NITRIDES
NITROGEN COMPOUNDS
PNICTIDES
SCATTERING
SEMIMETALS
SILICON COMPOUNDS