Fabrication of surface textures by ion implantation for antireflection of silicon crystals
- College of Nanoscale Science and Engineering, University at Albany-State University of New York, Albany, New York 12203 (United States)
We report on a method based on ion implantation and thermal annealing to fabricate silicon surface textures for antireflection purposes. Modification to crystalline Si surfaces by hydrogen ion implantation is a well known phenomenon, but the surface structures generated by H implantation alone, typically of a low packing density and small aspect ratio, are not effective in suppressing light reflection from Si. We show that coimplantation of hydrogen and argon, combined with thermal annealing and oxidation, can result in an interesting surface morphology in Si crystals, yielding the lowest light reflectance of {approx}1% over a broad spectral range at various light incident angles. In addition, lattice damage to crystalline Si generated by ion implantation is reduced or completely removed by the annealing processes. Possible mechanisms for the formation of such observed surface textures are discussed.
- OSTI ID:
- 21464557
- Journal Information:
- Applied Physics Letters, Vol. 97, Issue 19; Other Information: DOI: 10.1063/1.3515842; (c) 2010 American Institute of Physics; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ANNEALING
ANTIREFLECTION COATINGS
ARGON IONS
CRYSTALS
HYDROGEN IONS
ION IMPLANTATION
MODIFICATIONS
MORPHOLOGY
OXIDATION
ROUGHNESS
SEMICONDUCTOR MATERIALS
SILICON
SPECTRAL REFLECTANCE
SURFACES
TEXTURE
CHARGED PARTICLES
CHEMICAL REACTIONS
COATINGS
ELEMENTS
HEAT TREATMENTS
IONS
MATERIALS
OPTICAL PROPERTIES
PHYSICAL PROPERTIES
SEMIMETALS
SURFACE PROPERTIES