Direct growth of few-layer graphene on 6H-SiC and 3C-SiC/Si via propane chemical vapor deposition

Journal Article · Mon Oct 25 00:00:00 EDT 2010 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.3503972· OSTI ID:21464537

Michon, A; Vezian, S; Portail, M ^[1]; Ouerghi, A ^[2]; Zielinski, M; Chassagne, T ^[3]

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1. CNRS-CRHEA, Rue Bernard Gregory, 06560 Valbonne (France)
2. CNRS-LPN, Route de Nozay, 91460 Marcoussis (France)
3. NOVASiC, Savoie Technolac, Arche Bat 4, BP267, 73375 Le Bourget du Lac (France)

We propose to grow graphene on SiC by a direct carbon feeding through propane flow in a chemical vapor deposition reactor. X-ray photoemission and low energy electron diffraction show that propane allows to grow few-layer graphene (FLG) on 6H-SiC(0001). Surprisingly, FLG grown on (0001) face presents a rotational disorder similar to that observed for FLG obtained by annealing on (000-1) face. Thanks to a reduced growth temperature with respect to the classical SiC annealing method, we have also grown FLG/3C-SiC/Si(111) in a single growth sequence. This opens the way for large-scale production of graphene-based devices on silicon substrate.

• OSTI ID: 21464537
• Journal Information: Applied Physics Letters, Vol. 97, Issue 17; Other Information: DOI: 10.1063/1.3503972; (c) 2010 American Institute of Physics; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
77 NANOSCIENCE AND NANOTECHNOLOGY
ANNEALING
CARBON
CHEMICAL VAPOR DEPOSITION
CRYSTAL GROWTH
CRYSTAL STRUCTURE
ELECTRON DIFFRACTION
INTERFACES
LAYERS
NANOSTRUCTURES
PHOTOEMISSION
PROPANE
SILICON
SILICON CARBIDES
SUBSTRATES
X-RAY PHOTOELECTRON SPECTROSCOPY
ALKANES
CARBIDES
CARBON COMPOUNDS
CHEMICAL COATING
COHERENT SCATTERING
DEPOSITION
DIFFRACTION
ELECTRON SPECTROSCOPY
ELEMENTS
EMISSION
HEAT TREATMENTS
HYDROCARBONS
NONMETALS
ORGANIC COMPOUNDS
PHOTOELECTRON SPECTROSCOPY
SCATTERING
SECONDARY EMISSION
SEMIMETALS
SILICON COMPOUNDS
SPECTROSCOPY
SURFACE COATING