High-power 2.5-W cw AlGaAs/GaAs laser diodes

Journal Article · Tue Jul 31 00:00:00 EDT 2001 · Quantum Electronics (Woodbury, N.Y.)

DOI:https://doi.org/10.1070/QE2001V031N07ABEH002016· OSTI ID:21454735

Aluev, A V; Morozyuk, A M; Kobyakova, M Sh; Chel'nyi, A A ^[1]

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1. M.F. Stel'makh Polyus Research and Development Institute, Moscow (Russian Federation)

2.5-W cw laser diodes with a 100-{mu}m wide strip contact emitting at a wavelength of 850 nm are manufactured and studied. The laser heterostructure with a heavily-doped P emitter was prepared by the metal-organic chemical-vapour deposition (MOCVD) technique in the AlGaAs/GaAs system. For a cavity of length 800 {mu}m, the external differential quantum efficiency was 84% (1.2 W A{sup -1}), and the characteristic threshold current temperature was 230 K. The predicted service life of the laser is more than 5 x 10{sup 3} h. (lasers, active media)

• OSTI ID: 21454735
• Journal Information: Quantum Electronics (Woodbury, N.Y.), Vol. 31, Issue 7; Other Information: DOI: 10.1070/QE2001v031n07ABEH002016; ISSN 1063-7818
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALUMINIUM ARSENIDES
CHEMICAL VAPOR DEPOSITION
DOPED MATERIALS
GALLIUM ARSENIDES
LASER CAVITIES
LASERS
ORGANOMETALLIC COMPOUNDS
QUANTUM EFFICIENCY
SERVICE LIFE
THRESHOLD CURRENT
WAVELENGTHS
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CHEMICAL COATING
CURRENTS
DEPOSITION
EFFICIENCY
ELECTRIC CURRENTS
GALLIUM COMPOUNDS
LIFETIME
MATERIALS
ORGANIC COMPOUNDS
PNICTIDES
SURFACE COATING