skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: A study on the gate voltage dependence of the activation energy in Meyer-Neldel rule for charge mobility in pentacene OTFTs

Journal Article · · AIP Conference Proceedings
DOI:https://doi.org/10.1063/1.3455638· OSTI ID:21377998
;  [1];  [2]; ; ; ;  [3]
  1. University of Salerno, Department of Information and Electrical Engineering, via Ponte Don Melillo 1, 84084 Fisciano (Italy)
  2. University of Salerno, Department of Information and Electrical Engineering, via Ponte Don Melillo 1, 84084 Fisciano (Italy); Italian National Agency for New Technologies, Energy and Sustainable Economic Development (ENEA), Portici Research Centre, p.le E. Fermi 1, 80055 Portici (Italy)
  3. Italian National Agency for New Technologies, Energy and Sustainable Economic Development (ENEA), Portici Research Centre, p.le E. Fermi 1, 80055 Portici (Italy)

A temperature analysis of the OTFT having pentacene as channel semiconductor and PMMA as gate dielectric has been performed. The experimental results have been studied by extracting the field-effect mobility of the TFTs and relating it to the sample's temperature. We have found the mobility to follow the Meyer-Neldel rule. This behavior can be considered imputable to the channel carrier hopping. The gate voltage effect on the thermal activation energy for the mobility and the asymptotic parameter has been also taken into account.

OSTI ID:
21377998
Journal Information:
AIP Conference Proceedings, Vol. 1255, Issue 1; Conference: 5. international conference on times of polymers (TOP) and composites, Ischia (Italy), 20-23 Jun 2010; Other Information: DOI: 10.1063/1.3455638; (c) 2010 American Institute of Physics; ISSN 0094-243X
Country of Publication:
United States
Language:
English