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Title: Gas diffusion ultrabarriers on polymer substrates using Al{sub 2}O{sub 3} atomic layer deposition and SiN plasma-enhanced chemical vapor deposition

Journal Article · · Journal of Applied Physics
DOI:https://doi.org/10.1063/1.3159639· OSTI ID:21359324
;  [1]; ;  [2];  [2]
  1. DuPont Central Research and Development, Wilmington, Delaware 19880 (United States)
  2. Deparment of Chemistry and Biochemistry, University of Colorado, Boulder, Colorado 80309 (United States)

Thin films grown by Al{sub 2}O{sub 3} atomic layer deposition (ALD) and SiN plasma-enhanced chemical vapor deposition (PECVD) have been tested as gas diffusion barriers either individually or as bilayers on polymer substrates. Single films of Al{sub 2}O{sub 3} ALD with thicknesses of >=10 nm had a water vapor transmission rate (WVTR) of <=5x10{sup -5} g/m{sup 2} day at 38 deg. C/85% relative humidity (RH), as measured by the Ca test. This WVTR value was limited by H{sub 2}O permeability through the epoxy seal, as determined by the Ca test for the glass lid control. In comparison, SiN PECVD films with a thickness of 100 nm had a WVTR of approx7x10{sup -3} g/m{sup 2} day at 38 deg. C/85% RH. Significant improvements resulted when the SiN PECVD film was coated with an Al{sub 2}O{sub 3} ALD film. An Al{sub 2}O{sub 3} ALD film with a thickness of only 5 nm on a SiN PECVD film with a thickness of 100 nm reduced the WVTR from approx7x10{sup -3} to <=5x10{sup -5} g/m{sup 2} day at 38 deg. C/85% RH. The reduction in the permeability for Al{sub 2}O{sub 3} ALD on the SiN PECVD films was attributed to either Al{sub 2}O{sub 3} ALD sealing defects in the SiN PECVD film or improved nucleation of Al{sub 2}O{sub 3} ALD on SiN.

OSTI ID:
21359324
Journal Information:
Journal of Applied Physics, Vol. 106, Issue 2; Other Information: DOI: 10.1063/1.3159639; (c) 2009 American Institute of Physics; ISSN 0021-8979
Country of Publication:
United States
Language:
English