Effect of thermal annealing on charge exchange between oxygen interstitial defects within HfO{sub 2} and oxygen-deficient silicon centers within the SiO{sub 2}/Si interface

Journal Article · Mon Apr 20 00:00:00 EDT 2009 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.3122925· OSTI ID:21294050

Lauer, J L; Shohet, J L ^[1]; Nishi, Y ^[2]

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1. Department of Electrical and Computer Engineering and Plasma Processing and Technology Laboratory, University of Wisconsin-Madison, Madison, Wisconsin 53706 (United States)
2. Stanford University, Stanford, California 94305 (United States)

We compare the charging response of rapid thermally annealed (800 and 1000 deg. C) 4 nm thick HfO{sub 2} to as-deposited HfO{sub 2} on Si by measuring the surface potential of the HfO{sub 2} layers after vacuum ultraviolet (VUV) irradiation with 11.6 eV photons. From VUV spectroscopy, we determined all HfO{sub 2} layers show the presence of oxygen-interstitial defects (OIDs). The electronic states of OID in HfO{sub 2} line up in energy with oxygen-deficient Si centers within the SiO{sub 2} interfacial layer. This implies charge exchange between OIDs within HfO{sub 2} and the O-deficient silicon centers within the SiO{sub 2} interfacial layer are very important for controlling the radiation-induced trapped charge in HfO{sub 2} dielectric stacks.

• OSTI ID: 21294050
• Journal Information: Applied Physics Letters, Vol. 94, Issue 16; Other Information: DOI: 10.1063/1.3122925; (c) 2009 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ANNEALING
CHARGE EXCHANGE
DIELECTRIC MATERIALS
FAR ULTRAVIOLET RADIATION
HAFNIUM OXIDES
INTERFACES
INTERSTITIALS
IRRADIATION
LAYERS
OXYGEN
PHOTONS
SEMICONDUCTOR MATERIALS
SILICON
SILICON OXIDES
SPECTROSCOPY
SURFACE POTENTIAL
TEMPERATURE DEPENDENCE
TEMPERATURE RANGE 1000-4000 K
THIN FILMS
ULTRAVIOLET SPECTRA