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Title: Transport in GaAs/Al{sub x}Ga{sub 1-x}As superlattices with narrow forbidden minibands: Low-frequency negative differential conductivity and current oscillations

Journal Article · · Semiconductors
; ;  [1]
  1. Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation)

Current-voltage characteristics have been measured and low-frequency current instabilities have been studied for GaAs/Al{sub x}Ga{sub 1-x}As superlattices with narrow forbidden minibands. At relatively low electric fields, a saw-like structure for current-voltage characteristics with alternating portions of positive and negative differential conductivity and spontaneous generation of low-frequency current oscillations with a complex frequency spectrum (varying from discrete to continuous) are observed. It is shown that the observed specific features of electron transport are caused by the spatial-temporal dynamics of electric-field domains (dipoles and monopoles). The effects of the bifurcation, hysteresis, and multistability of current-voltage characteristics are also observed. At high fields, regular features are observed and identified in the current-voltage characteristics; these features are caused by resonance tunneling of electrons between the levels of the Wannier-Stark ladders belonging to quantum wells separated by several periods.

OSTI ID:
21260418
Journal Information:
Semiconductors, Vol. 43, Issue 2; Other Information: DOI: 10.1134/S1063782609020225; Copyright (c) 2009 Pleiades Publishing, Ltd; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
Country of Publication:
United States
Language:
English