Effect of annealing on the effective barrier height and ideality factor of nickel Schottky contacts to 4H-SiC
- Russian Academy of Sciences, Ioffe Physicotechnical Institute (Russian Federation)
Effect of annealing on the electrical properties of 50 nickel Schottky contacts formed on a single 4H-SiC wafer has been studied. It is shown that annealing at 200 deg. C for 1 h favors homogenization of the metal-semiconductor heterointerface, which leads to a narrower scatter of such contact parameters as the ideality factor and effective barrier height. At higher annealing temperatures (350-450 deg. C) the scatter of these parameters again increases; presumably, this occurs because of the local chemical interaction of nickel with silicon carbide.
- OSTI ID:
- 21260368
- Journal Information:
- Semiconductors, Vol. 43, Issue 5; Other Information: DOI: 10.1134/S1063782609050145; Copyright (c) 2009 Pleiades Publishing, Ltd; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
- Country of Publication:
- United States
- Language:
- English
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