Consideration of spontaneous polarization in the problem of NH-SiC/3C-SiC/NH-SiC heterostructures formed by cubic (3C) and hexagonal (NH) silicon carbide polytypes

Journal Article · Wed Oct 15 00:00:00 EDT 2008 · Semiconductors

DOI:https://doi.org/10.1134/S1063782608100084· OSTI ID:21255594

Troshin, A V ^[1]

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1. St. Petersburg State Electrotechnical University (Russian Federation)

The problem of three-layer NH-SiC/3C-SiC/NH-SiC heterostructures was considered within the model previously proposed for describing the heterojunction between NH-SiC/3C-SiC silicon carbide polytypes, taking into account spontaneous polarization of hexagonal regions. The potential in the cubic 3C region was approximated by a model function constructed from physical considerations. Much attention was paid to the study of the effect of spontaneous polarization and the 3C region thickness on energy characteristics of quantum wells formed near heterojunctions.

• OSTI ID: 21255594
• Journal Information: Semiconductors, Vol. 42, Issue 10; Other Information: DOI: 10.1134/S1063782608100084; Copyright (c) 2008 Pleiades Publishing, Ltd; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CUBIC LATTICES
HETEROJUNCTIONS
HEXAGONAL LATTICES
LAYERS
POLARIZATION
QUANTUM WELLS
SILICON CARBIDES