Room temperature electroluminescence from the n-ZnO/p-GaN heterojunction device grown by MOCVD
- State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Qianjin Street 2699, Changchun 130012 (China)
- State Key Laboratory for Materials Modification by Laser, Ion, Electron Beams, School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 116024 (China)
The heterojunction light-emitting diode with n-ZnO/p-GaN structure was grown on (0 0 0 1) sapphire substrate by metalorganic chemical vapor deposition (MOCVD) technique. The heterojunction structure was consisted of an Mg-doped p-type GaN layer with a hole concentration of {approx}10{sup 17} cm{sup -3} and a unintentionally doped n-type ZnO layer with an electron concentration of {approx}10{sup 18} cm{sup -3}. A distinct blue-violet electroluminescence with a dominant emission peak centered at {approx}415 nm was observed at room temperature from the heterojunction structure under forward bias conditions. The origins of the electroluminescence (EL) emissions are discussed in comparison with the photoluminescence spectra, and it was supposed to be attributed to a radiative recombination in both n-ZnO and p-GaN sides.
- OSTI ID:
- 21195046
- Journal Information:
- Materials Research Bulletin, Vol. 43, Issue 12; Other Information: DOI: 10.1016/j.materresbull.2008.02.020; PII: S0025-5408(08)00065-2; Copyright (c) 2008 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved; Country of input: International Atomic Energy Agency (IAEA); ISSN 0025-5408
- Country of Publication:
- United States
- Language:
- English
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