Epitaxial growth of nickel on Si(100) by dc magnetron sputtering
- GKSS Forschungszentrum GmbH, Max-Planck-Strasse 1, 21502 Geesthacht (Germany)
The influence of the substrate temperature on the growth of highly textured Ni(111) and epitaxial Ni(200) with the relationships Ni[100] parallel Si[110] and Ni(001) parallel Si(001) on hydrogen terminated Si(100) wafer substrates by means of direct current magnetron sputtering is reported. In order to minimize crystal defect formation and to achieve a high quality epitaxial growth of Ni on Si, a two step deposition process was developed whereby different deposition conditions were used for an initial nickel seed layer and the remaining nickel film. The in-plane and out-of-plane structural properties of the films were investigated using x-ray scattering techniques, whereas magneto-optical Kerr effect and neutron reflectometry were used to confirm the magnetic nature of the epitaxially deposited nickel films.
- OSTI ID:
- 21180006
- Journal Information:
- Journal of Applied Physics, Vol. 104, Issue 11; Other Information: DOI: 10.1063/1.3032383; (c) 2008 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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