An ultrathin Zr(Ge) alloy film as an exhaustion interlayer combined with Cu(Zr) seed layer for the Cu/porous SiOC:H dielectric integration

Journal Article · Mon Oct 27 00:00:00 EDT 2008 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.3013565· OSTI ID:21175698

Liu, B; Song, Z X; Li, Y H; Xu, K W ^[1]

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1. State-key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an 710049 (China)

A highly reliable interface of an ultrathin Zr(Ge) exhaustion interlayer between Cu(Zr) film and porous SiOC:H (p-SiOC:H) dielectric has been developed in the present work. After being processed at a moderate elevated temperature (say, 450 deg. C), a self-formed nanomultilayer of CuGe{sub x}/ZrO{sub x}(ZrSi{sub y}O{sub x}) was produced at the interface of Cu(Zr)/p-SiOC:H film stacks, which showed strong ability to effectively hinder Cu atoms diffusion into p-SiOC:H film and free Si atoms diffusion into Cu film. The mechanism involving the thermal stability of the films system is analyzed based on detailed characterization studies.

• OSTI ID: 21175698
• Journal Information: Applied Physics Letters, Vol. 93, Issue 17; Other Information: DOI: 10.1063/1.3013565; (c) 2008 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ANNEALING
COPPER ALLOYS
DIELECTRIC MATERIALS
GERMANIUM ALLOYS
INTERMETALLIC COMPOUNDS
LAYERS
POROUS MATERIALS
SILICON OXIDES
THIN FILMS
ZIRCONIUM ALLOYS