Further insight into the temperature quenching of photoluminescence from InAs/GaAs self-assembled quantum dots

Journal Article · Tue Apr 15 00:00:00 EDT 2008 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.2913179· OSTI ID:21137166

Chahboun, A; Vasilevskiy, M I; Baidus, N V ^[1]; Cavaco, A; Sobolev, N A; Carmo, M C ^[2]; Alves, E ^[3]; Zvonkov, B N ^[4]

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1. Centro de Fisica, Universidade do Minho, 4710-057 Braga (Portugal)
2. Departamento de Fisica and I3N, Universidade de Aveiro, 3810-193 Aveiro (Portugal)
3. Instituto Tecnologico e Nuclear, EN10, 2686-953 Sacavem (Portugal)
4. Physical-Technical Research Institute, N. I. Lobachevskiy State University, Nihzniy Novgorod (Russian Federation)

The possibility of controlling the photoluminescence (PL) intensity and its temperature dependence by means of in-growth and postgrowth technological procedures has been demonstrated for InAs/GaAs self-assembled quantum dots (QDs) embedded in an InGaAs quantum well (QW). The improvement of the QD emission at room temperature (RT), achieved due to a treatment with tetrachloromethane used during the growth, is explained by the reduction of the point defect concentration in the capping layer. It is shown that the PL quenching at RT appears again if the samples are irradiated with protons, above a certain dose. These findings are accounted for by the variations in the quasi-Fermi level position of the minority carriers, which are related to the concentration of trapping centers in the GaAs matrix and have been calculated using a photocarrier statistical model including both radiative and nonradiative recombination channels. By taking into consideration the temperature dependent distribution of the majority and minority carriers between the QDs, embedding QW and GaAs barriers, our calculated results for the PL intensity reproduce very well the experimentally observed trends.

• OSTI ID: 21137166
• Journal Information: Journal of Applied Physics, Vol. 103, Issue 8; Other Information: DOI: 10.1063/1.2913179; (c) 2008 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CARBON TETRACHLORIDE
CRYSTAL GROWTH
FERMI LEVEL
GALLIUM ARSENIDES
INDIUM ARSENIDES
ION BEAMS
PHOTOLUMINESCENCE
POINT DEFECTS
PROTONS
QUANTUM DOTS
QUANTUM WELLS
QUENCHING
RECOMBINATION
SEMICONDUCTOR MATERIALS
STATISTICAL MODELS
TEMPERATURE DEPENDENCE
TEMPERATURE RANGE 0273-0400 K