Mechanism of the effect of the electric field of a surface acoustic wave on the low-temperature photoluminescence kinetics in type-II GaAs/AlAs superlattices

Journal Article · Thu Feb 15 00:00:00 EST 2007 · Semiconductors

DOI:https://doi.org/10.1134/S1063782607020170· OSTI ID:21088438

Zhuravlev, K S ^[1]

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1. Russian Academy of Sciences, Institute of Semiconductor Physics, Siberian Division (Russian Federation)

Kinetics of the low-temperature photoluminescence (PL) of type-II GaAs/AlAs superlattices under the effect of the electric field of a surface acoustic wave is studied experimentally. It is found that application of electric-field pulses results in speeding up the PL kinetics of free and localized excitons and phonon replicas irrespective of the pulse duration. Analysis of the experimental data demonstrates that acceleration of the PL kinetics is related to the transport of excitons towards nonradiative recombination centers; this transport is promoted by the interaction of excitons with hot free charge carriers ejected from localized states.

• OSTI ID: 21088438
• Journal Information: Semiconductors, Vol. 41, Issue 2; Other Information: DOI: 10.1134/S1063782607020170; Copyright (c) 2007 Nauka/Interperiodica; Article Copyright (c) 2007 Pleiades Publishing, Ltd; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALUMINIUM ARSENIDES
CHARGE CARRIERS
ELECTRIC FIELDS
EXCITONS
GALLIUM ARSENIDES
KINETICS
PHONONS
PHOTOLUMINESCENCE
SOUND WAVES
SUPERLATTICES
SURFACES