STM and LEED studies of atomically ordered terraced Si(557) surfaces

Journal Article · Sun Apr 15 00:00:00 EDT 2007 · Semiconductors

DOI:https://doi.org/10.1134/S1063782607040136· OSTI ID:21088085

Bozhko, S I; Ionov, A M; Myagkov, A N; Abrosimov, N V ^[1]

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1. Russian Academy of Sciences, Institute of Solid State Physics (Russian Federation)

We report results of LEED, STM, and photoemission studies of the atomic and electronic structure of atomically ordered terraced Si(hhm) surfaces. LEED and STM data demonstrate the possibility of fabricating atomically accurate terraced structures based on Si(557) with different periodicities depending on the thermal treatment procedure. Atomically resolved STM images reveal (7 x 7) terrace ordering and triple step structure. Comparative photoemission studies of the valence band and Si 2p core level electronic structure have been done on clean stepped surfaces with different terrace widths (namely, Si(557), Si(556)) and flat Si(111)-(7 x 7)

• OSTI ID: 21088085
• Journal Information: Semiconductors, Vol. 41, Issue 4; Other Information: DOI: 10.1134/S1063782607040136; Copyright (c) 2007 Nauka/Interperiodica; Article Copyright (c) 2007 Pleiades Publishing, Ltd; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ELECTRON DIFFRACTION
ELECTRONIC STRUCTURE
HEAT TREATMENTS
PHOTOEMISSION
SCANNING TUNNELING MICROSCOPY
SILICON
SURFACES