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Title: Negatively charged excitons in semimagnetic CdSe/ZnSe/ZnMnSe quantum dots

Journal Article · · Journal of Experimental and Theoretical Physics
; ; ;  [1]; ;  [2]
  1. Russian Academy of Sciences, Institute of Solid State Physics (Russian Federation)
  2. Russian Academy of Sciences, Ioffe Physicotechnical Institute (Russian Federation)

Low-temperature (T = 1.6 K) photoluminescence (PL) of individual CdSe/ZnSe/ZnMnSe quantum dots (QDs) with different magnitudes of the sp-d exchange interaction between the magnetic impurity ions and charge carriers has been studied in a magnetic field up to 12 T applied in the Faraday and Voigt geometry. The magnitude of the interaction was controlled by changing the fraction ({eta}{sub e,h}) of the squared wave function of charge carriers in the semimagnetic barrier by means of variation of the nonmagnetic (ZnSe) layer thickness. It is established that the sp-d exchange interaction leads to a change in the sign of the effective hole g factor even for {eta}{sub e,h} {approx} 5%, while further increase in the interaction magnitude is accompanied by a rapid growth in the magnitude of spin splitting for both electrons and holes. The quantum yield of PL exhibits a significant decrease due to nonradiative Auger recombination with the excitation of Mn ions only for {eta}{sub e,h} {approx} 12%, while the rate of the holes spin relaxation starts growing only for still higher {eta}{sub e,h} values. In a strong magnetic field perpendicular to the sample plane, the alignment of Mn spins leads to suppression of the Auger recombination only in the excited spin state. For a small rate of the hole spin relaxation, this leads to a rather unusual result: the emission from an excited trion state predominates in strong magnetic fields.

OSTI ID:
21075727
Journal Information:
Journal of Experimental and Theoretical Physics, Vol. 105, Issue 2; Other Information: DOI: 10.1134/S1063776107080109; Copyright (c) 2007 Nauka/Interperiodica; Article Copyright (c) 2007 Pleiades Publishing, Inc; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7761
Country of Publication:
United States
Language:
English