Electrical properties of Pb{sub 0.97}La{sub 0.02}(Zr{sub 0.95}Ti{sub 0.05})O{sub 3} antiferroelectric thin films on TiO{sub 2} buffer layer

Journal Article · Tue Apr 01 00:00:00 EDT 2008 · Materials Research Bulletin

OSTI ID:21068255

Xihong, Hao ^[1]; Xi, Yao ^[1]

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1. Functional Materials Research Laboratory, Tongji University, Siping Road 1239, Shanghai 200092 (China)

Pb{sub 0.97}La{sub 0.02}(Zr{sub 0.95}Ti{sub 0.05})O{sub 3} antiferroelectric thin films with thickness of 500 nm were successfully deposited on TiO{sub 2} buffered Pt(1 1 1)/Ti/SiO{sub 2}/Si(1 0 0) and Pt(1 1 1)/Ti/SiO{sub 2}/Si(1 0 0) substrates via sol-gel process. Microstructure of Pb{sub 0.97}La{sub 0.02}(Zr{sub 0.95}Ti{sub 0.05})O{sub 3} thin films was studied by X-ray diffraction analyses. The antiferroelectric nature of the Pb{sub 0.97}La{sub 0.02}(Zr{sub 0.95}Ti{sub 0.05})O{sub 3} thin films was confirmed by the double hysteresis behaviors of polarization and double buffer fly response of dielectric constant versus applied voltage at room temperature. The capacitance-voltage behaviors of the Pb{sub 0.97}La{sub 0.02}(Zr{sub 0.95}Ti{sub 0.05})O{sub 3} films with and without TiO{sub 2} buffer layer were studied, as a function of temperature. The temperature dependence of dielectric constant displayed a similar behavior and the Curie temperature (T{sub c}) was 193 deg. C for films on both substrates. The current caused by the polarization and depolarization of polar in the Pb{sub 0.97}La{sub 0.02}(Zr{sub 0.95}Ti{sub 0.05})O{sub 3} films was detected by current density-electric field measurement.

• OSTI ID: 21068255
• Journal Information: Materials Research Bulletin, Vol. 43, Issue 4; Other Information: DOI: 10.1016/j.materresbull.2007.04.024; PII: S0025-5408(07)00162-6; Copyright (c) 2007 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved; Country of input: International Atomic Energy Agency (IAEA); ISSN 0025-5408
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
BUFFERS
CAPACITANCE
CURIE POINT
HYSTERESIS
LANTHANUM COMPOUNDS
LEAD COMPOUNDS
MICROSTRUCTURE
PERMITTIVITY
POLARIZATION
SILICON OXIDES
SOL-GEL PROCESS
TEMPERATURE DEPENDENCE
TEMPERATURE RANGE 0273-0400 K
TEMPERATURE RANGE 0400-1000 K
THIN FILMS
TITANIUM OXIDES
X-RAY DIFFRACTION
ZIRCONIUM COMPOUNDS