Deposition of transparent conductive mesoporous indium tin oxide thin films by a dip coating process
- College of Aerospace and Materials Engineering, National University of Defense Technology, Changsha 410073 (China)
Cetyltrimethyl ammonium bromide (CTAB) templated mesoporous indium tin oxide (ITO) thin films were deposited on quartz plates by an evaporation-induced self-assembly (EISA) process using a dip coating method. The starting solution was prepared by mixing indium chloride, tin chloride, and CTAB dissolved in ethanol. Five to fifty mole percent Sn-doped ITO films were prepared by heat-treatment at 400 deg. C for 5 h. The structural, adsorptive, electrical, and optical properties of mesoporous ITO thin films were investigated. Results indicate that the mesoporous ITO thin films have an ordered two-dimensional hexagonal (p6mm) structure, with nanocrystalline domains in the inorganic oxide framework. The continuous thin films have highly ordered pore sizes (>20 A), high Brunauer-Emmett-Teller (BET) surface area up to 340 m{sup 2}/g, large pore volume (>0.21 cm{sup 3}/g), outstanding transparency in the visible range (>80%), and show a minimum resistivity of {rho} = 1.2 x 10{sup -2} {omega} cm.
- OSTI ID:
- 21068252
- Journal Information:
- Materials Research Bulletin, Vol. 43, Issue 4; Other Information: DOI: 10.1016/j.materresbull.2007.04.021; PII: S0025-5408(07)00165-1; Copyright (c) 2007 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved; Country of input: International Atomic Energy Agency (IAEA); ISSN 0025-5408
- Country of Publication:
- United States
- Language:
- English
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