Nitrogen incorporation and optical studies of GaAsSbN/GaAs single quantum well heterostructures

Journal Article · Sat Sep 01 00:00:00 EDT 2007 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.2777448· OSTI ID:21057521

Nunna, Kalyan; Iyer, S; Wu, L; Li, J; Bharatan, S; Wei, X; Senger, R T; Bajaj, K K ^[1]

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1. North Carolina A and T State University, Greensboro, North Carolina 27411 (United States)

In this work, the effects of N incorporation on the optical properties of GaAsSbN/GaAs single quantum wells (SQWs) have been investigated using temperature, excitation, and magnetic dependencies of photoluminescence (PL) characteristics. These layers were grown in an elemental solid source molecular beam epitaxy system with a rf plasma N source. The N concentrations in the range of 0.5%-2.5% were investigated in this study. The SQW with N{approx}0.5% exhibits a behavior similar to that in an intermediate regime where the contributions from the localized states in the band gap are dominant. The temperature and excitation dependencies of the PL characteristics indicate that for the N concentration of 0.9% and above, the alloy behavior is analogous to that of a regular alloy and the changes in optical properties are only marginal. The conduction band effective mass (m{sub eff}) values computed from the magnetophotoluminescence spectra using a variational formalism and the band anticrossing model are in good agreement and indicate enhanced values of m{sub eff}. However, there is no significant variation in m{sub eff} values of QWs for N{>=}0.9%. Small redshift of about 30-50 meV for the temperature variations from 10 to 300 K in conjunction with unusually small blueshift observed in the excitation dependence of PL for N{>=}0.9% indicate that this system holds a great promise for laser applications at 1.55 {mu}m and beyond.

• OSTI ID: 21057521
• Journal Information: Journal of Applied Physics, Vol. 102, Issue 5; Other Information: DOI: 10.1063/1.2777448; (c) 2007 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ANTIMONY ALLOYS
CRYSTAL GROWTH
EFFECTIVE MASS
ENERGY GAP
GALLIUM ALLOYS
GALLIUM ANTIMONIDES
GALLIUM ARSENIDES
GALLIUM NITRIDES
LAYERS
MAGNETO-OPTICAL EFFECTS
MEV RANGE 10-100
MOLECULAR BEAM EPITAXY
OPTICAL PROPERTIES
PHOTOLUMINESCENCE
QUANTUM WELLS
RED SHIFT
SEMICONDUCTOR MATERIALS
VARIATIONAL METHODS