Radio-frequency magnetron sputtering and wet thermal oxidation of ZnO thin film
- Institute of Materials Research and Engineering, 3 Research Link, Singapore 117602 (Singapore)
The authors studied the growth and wet thermal oxidation (WTO) of ZnO thin films using a radio-frequency magnetron sputtering technique. X-ray diffraction reveals a preferred orientation of [1010]ZnO(0002)//[1120]Al{sub 2}O{sub 3}(0002) coexisted with a small amount of ZnO (1011) and ZnO (1013) crystals on the Al{sub 2}O{sub 3} (0001) substrate. The ZnO (1011) and ZnO (1013) crystals, as well as the in-plane preferred orientation, are absent from the growth of ZnO on the GaAs(001) substrate. WTO at 550 deg. C improves the crystalline and the photoluminescence more significantly than annealing in air, N{sub 2} and O{sub 2} ambient; it also tends to convert the crystal from ZnO (1011) and ZnO (1013) to ZnO (0002). The evolution of the photoluminescence upon WTO and annealing reveals that the green and orange emissions, centered at 520 and 650 nm, are likely originated from oxygen vacancies and oxygen interstitials, respectively; while the 420 nm emission, which is very sensitive to the postgrowth thermal processing regardless of the substrate and the ambient gas, is likely originated from the surface-state related defects.
- OSTI ID:
- 21057503
- Journal Information:
- Journal of Applied Physics, Vol. 102, Issue 4; Other Information: DOI: 10.1063/1.2773637; (c) 2007 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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