Effects of low-fluence swift iodine ion bombardment on the crystallization of ion-beam-synthesized silicon carbide

Journal Article · Sun Apr 15 00:00:00 EDT 2007 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.2720090· OSTI ID:20982830

Intarasiri, S; Yu, L D; Singkarat, S; Hallen, A; Lu, J; Ottosson, M; Jensen, J; Possnert, G ^[1]

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1. FNRF, Department of Physics, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand)

Ion beam synthesis using high-fluence carbon ion implantation in silicon in combination with subsequent or in situ thermal annealing has been shown to be able to form nanocrystalline cubic SiC (3C-SiC) layers in silicon. In this study, a silicon carbide layer was synthesized by 40-keV {sup 12}C{sup +} implantation of a p-type (100) Si wafer at a fluence of 6.5x10{sup 17} ions/cm{sup 2} at an elevated temperature. The existence of the implanted carbon in Si substrate was investigated by time-of-flight energy elastic recoil detection analysis. The SiC layer was subsequently irradiated by 10-30 MeV {sup 127}I ions to a very low fluence of 10{sup 12} ions/cm{sup 2} at temperatures from 80 to 800 degree sign C to study the effect on the crystallization of the SiC layer. Infrared spectroscopy and Raman scattering measurement were used to monitor the formation of SiC and detailed information about the SiC film properties was obtained by analyzing the peak shape of the Si-C stretching mode absorption. The change in crystallinity of the synthesized layer was probed by glancing incidence x-ray diffraction measurement and transmission electron microscopy was also used to confirm the results and to model the crystallization process. The results from all these measurements showed in a coherent way that the synthesized structure was a polycrystalline layer with nanometer sized SiC crystals buried in a-Si matrix. The crystallinity of the SiC layer was enhanced by the low-fluence swift heavy ion bombardment and also favored by higher energy, higher fluence, and higher substrate temperature. It is suggested that electronic stopping plays a dominant role in the enhancement.

• OSTI ID: 20982830
• Journal Information: Journal of Applied Physics, Vol. 101, Issue 8; Other Information: DOI: 10.1063/1.2720090; (c) 2007 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ABSORPTION SPECTROSCOPY
ANNEALING
CARBON IONS
CRYSTAL STRUCTURE
CRYSTALLIZATION
ENERGY-LOSS SPECTROSCOPY
INFRARED SPECTRA
IODINE 127 BEAMS
IODINE IONS
ION IMPLANTATION
MEV RANGE 10-100
NANOSTRUCTURES
RAMAN EFFECT
RAMAN SPECTRA
RUTHERFORD BACKSCATTERING SPECTROSCOPY
SILICON CARBIDES
THIN FILMS
TIME-OF-FLIGHT METHOD
TRANSMISSION ELECTRON MICROSCOPY
X-RAY DIFFRACTION