Radiation damage mechanisms for luminescence in Eu-doped GaN
- Lawrence Livermore National Laboratory, University of California, Livermore, California 94551 (United States)
Thin films of Eu-doped GaN were irradiated with 500 keV He{sup +} ions to understand radiation damage mechanisms and to quantify luminescence efficiency. The dependence of ion-beam-induced luminescence intensity on ion fluence was consistent with the simultaneous creation of nonradiative defects and the destruction of luminescent centers associated with 4f-4f core-level transitions in Eu{sup 3+}. This model contrasts with a previous description which takes into account only nonradiative defect generation in GaN:Eu. Based on light from a BaF{sub 2} scintillator standard, the luminescent energy generation efficiency of GaN:Eu films doped to {approx}3x10{sup 18} cm{sup -3} Eu is estimated to be {approx}0.1%.
- OSTI ID:
- 20982738
- Journal Information:
- Journal of Applied Physics, Vol. 101, Issue 5; Other Information: DOI: 10.1063/1.2696527; (c) 2007 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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