Spin polarization of Co{sub 2}MnGe and Co{sub 2}MnSi thin films with A2 and L2{sub 1} structures
- Graduate School of Pure and Applied Sciences, University of Tsukuba, Tsukuba 305-0047 (Japan)
Spin polarizations (P) of polycrystalline Co{sub 2}MnGe and Co{sub 2}MnSi films that were sputter deposited on thermally oxidized Si substrates at various substrate temperatures (T{sub s}) were measured by the point contact Andreev reflection technique. While continuous films were grown at T{sub s}=500 degree sign C with the L2{sub 1} structure, Mn-deficit islands were formed at T{sub s}>700 degree sign C. P showed strong dependence on the state of order of the alloys; P=0.58 for L2{sub 1} ordered Co{sub 2}MnGe, P=0.35 for A2 Co{sub 2}MnGe, P=0.54 for L2{sub 1} ordered Co{sub 2}MnSi, and P=0.52 for A2 Co{sub 2}MnSi. The experimentally determined P values of the L2{sub 1} ordered films are lower than the theoretical predictions, which is attributed to the imperfect L2{sub 1} ordering.
- OSTI ID:
- 20982641
- Journal Information:
- Journal of Applied Physics, Vol. 101, Issue 2; Other Information: DOI: 10.1063/1.2409775; (c) 2007 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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