Interface effect on dielectric constant of HfO{sub 2}/Al{sub 2}O{sub 3} nanolaminate films deposited by plasma-enhanced atomic layer deposition
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, Daejeon 305-701 (Korea, Republic of)
The effect of the interface between Al{sub 2}O{sub 3} and HfO{sub 2} sublayers on the dielectric constant was investigated in HfO{sub 2}/Al{sub 2}O{sub 3} nanolaminate films deposited using plasma-enhanced atomic layer deposition. After annealing at 700 deg. C, the dielectric constants of the nanolaminate films with a sublayer thickness of 40 A ring or greater were the same as the calculated values for a series of capacitors consisting of amorphous Al{sub 2}O{sub 3} and monoclinic or tetragonal HfO{sub 2}. As the sublayer thickness was reduced to 10 A, the dielectric constant increased up to 17.7 because a thin Hf-O-Al mixture layer, of which the number increases drastically in the nanolaminate films with thin sublayers, is formed at the interface.
- OSTI ID:
- 20971954
- Journal Information:
- Applied Physics Letters, Vol. 90, Issue 23; Other Information: DOI: 10.1063/1.2746416; (c) 2007 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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