High mobility bottom gate InGaZnO thin film transistors with SiO{sub x} etch stopper
- Corporate R and D Center, Samsung SDI Co., LTD, 428-5, Gongse-Dong, Kiheung-Gu, Yongin-Si, Gyeonggi-Do 449-902 (Korea, Republic of)
The authors report on the fabrication of thin film transistors (TFTs), which use an amorphous indium gallium zinc oxide (a-IGZO) channel, by rf sputtering at room temperature and for which the channel length and width are patterned by photolithography and dry etching. To prevent plasma damage to the active channel, a 100-nm-thick SiO{sub x} layer deposited by plasma enhanced chemical vapor deposition was adopted as an etch stopper structure. The a-IGZO TFT (W/L=10 {mu}m/50 {mu}m) fabricated on glass exhibited a high field-effect mobility of 35.8 cm{sup 2}/V s, a subthreshold gate swing value of 0.59 V/decade, a thrseshold voltage of 5.9 V, and an I{sub on/off} ratio of 4.9x10{sup 6}, which is acceptable for use as the switching transistor of an active-matrix TFT backplane.
- OSTI ID:
- 20971936
- Journal Information:
- Applied Physics Letters, Vol. 90, Issue 21; Other Information: DOI: 10.1063/1.2742790; (c) 2007 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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