Growth of the Zn{sub 1-x}Mn {sub x}O alloy by the MOCVD technique

Journal Article · Thu Jun 15 00:00:00 EDT 2006 · Materials Research Bulletin

DOI:https://doi.org/10.1016/j.materresbull.2005.12.001· OSTI ID:20895221

Chikoidze, E ^[1]; Dumont, Y ^[2]; Jomard, F ^[2]; Ballutaud, D ^[2]; Galtier, P ^[2]; Ferrand, D ^[3]; Sallet, V ^[2]; Gorochov, O ^[2]

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1. Laboratoire de Physique des Solides et de Cristallogenese, CNRS/Universite de Versailles-Saint Quentin, 1 Place Aristide Briand, 92195 Meudon Cedex (France) and Tbilisi State University, Material Science Department, Chavchavadze Ave. 3, 0127 Tbilisi (Georgia)
2. Laboratoire de Physique des Solides et de Cristallogenese, CNRS/Universite de Versailles-Saint Quentin, 1 Place Aristide Briand, 92195 Meudon Cedex (France)
3. CNRS-CEA-UJF Joint Group, Laboratoire de Spectrometrie Physique, BP 87, 38402 Saint Martin d'Heres (France)

Single-phase thin films of the diluted magnetic semiconductor Zn{sub 1-x}Mn {sub x}O have been grown by the MOCVD technique. Depositions have been done at T = 450 deg. C on fused silica and (0 0 0 1) sapphire substrates. Layers on silica exhibit polycrystalline structure with [0 0 1] preferential orientation while Zn{sub 1-x}Mn {sub x}O films are (0 0 0 1) epitaxially grown on c-sapphire with the epitaxy relation: 30{sup o} rotation of the Zn{sub 1-x}Mn {sub x}O [1 0 0] direction with respect to the [1 0 0] of the substrate. The manganese content varies in the (0-30%) range and is always higher in samples grown on sapphire substrates under the same conditions. Variations of a and c lattice parameters, assessed by X-ray diffraction, follow Vegard's law and attest to the incorporation of substitutional Mn{sup 2+} ions. Hall effect measurements show a decrease of the mobility with the incorporation of manganese in ZnO, and optical transmission results present the shift of the absorption edge towards higher energies.

• OSTI ID: 20895221
• Journal Information: Materials Research Bulletin, Vol. 41, Issue 6; Other Information: DOI: 10.1016/j.materresbull.2005.12.001; PII: S0025-5408(05)00438-1; Copyright (c) 2005 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved; Country of input: International Atomic Energy Agency (IAEA); ISSN 0025-5408
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ABSORPTION
CHEMICAL VAPOR DEPOSITION
CRYSTAL GROWTH
EPITAXY
HALL EFFECT
LATTICE PARAMETERS
LAYERS
MAGNETIC SEMICONDUCTORS
MANGANESE
MANGANESE IONS
OPTICAL PROPERTIES
POLYCRYSTALS
SAPPHIRE
SILICA
SUBSTRATES
THIN FILMS
VEGARD LAW
X-RAY DIFFRACTION
ZINC ALLOYS
ZINC OXIDES