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Title: Characterisation Of The Beam Plasma In High Current, Low Energy Ion Beams For Implanters

Journal Article · · AIP Conference Proceedings
DOI:https://doi.org/10.1063/1.2401526· OSTI ID:20891839
; ; ;  [1]; ;  [2]
  1. Institute of Materials Research, University of Salford, Salford M4 5WT (United Kingdom)
  2. Applied Materials, Foundry Lane, Horsham, RH13 5PY (United Kingdom)

The effective transport of high current, positive ion beams at low energies in ion implanters requires the a high level of space charge compensation. The self-induced or forced introduction of electrons is known to result in the creation of a so-called beam plasma through which the beam propagates. Despite the ability of beams at energies above about 3-5 keV to create their own neutralising plasmas and the development of highly effective, plasma based neutralising systems for low energy beams, very little is known about the nature of beam plasmas and how their characteristics and capabilities depend on beam current, beam energy and beamline pressure. These issues have been addressed in a detailed scanning Langmuir probe study of the plasmas created in beams passing through the post-analysis section of a commercial, high current ion implanter. Combined with Faraday cup measurements of the rate of loss of beam current in the same region due to charge exchange and scattering collisions, the probe data have provided a valuable insight into the nature of the slow ion and electron production and loss processes. Two distinct electron energy distribution functions are observed with electron temperatures {>=} 25 V and around 1 eV. The fast electrons observed must be produced in their energetic state. By studying the properties of the beam plasma as a function of the beam and beamline parameters, information on the ways in which the plasma and the beam interact to reduce beam blow-up and retain a stable plasma has been obtained.

OSTI ID:
20891839
Journal Information:
AIP Conference Proceedings, Vol. 866, Issue 1; Conference: IIT 2006: 16. international conference on ion implantation technology, Marseille (France), 11-16 Jun 2006; Other Information: DOI: 10.1063/1.2401526; (c) 2006 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
Country of Publication:
United States
Language:
English