Structural, electrical and optical properties of Bi{sub 2}Se{sub 3} and Bi{sub 2}Se{sub (3-x)}Te {sub x} thin films

Journal Article · Thu Aug 11 00:00:00 EDT 2005 · Materials Research Bulletin

DOI:https://doi.org/10.1016/j.materresbull.2005.04.012· OSTI ID:20891572

Augustine, Saji ^[1]; Ampili, S ^[2]; Kang, Jeung Ku ^[3]; Mathai, Elizabeth ^[2]

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1. Crystal Growth Laboratory, Department of Physics, Cochin University of Science and Technology, Cochin 682022, Kerala, (India) and Materials and Process Simulation Laboratory, Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 305701 (Korea, Republic of)
2. Crystal Growth Laboratory, Department of Physics, Cochin University of Science and Technology, Cochin 682022, Kerala (India)
3. Materials and Process Simulation Laboratory, Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 305701 (Korea, Republic of)

Thin films of Bi{sub 2}Se{sub 3}, Bi{sub 2}Se{sub 2.9}Te{sub 0.1}, Bi{sub 2}Se{sub 2.7}Te{sub 0.3} and Bi{sub 2}Se{sub 2.6}Te{sub 0.4} are prepared by compound evaporation. Micro structural, optical and electrical measurements are carried out on these films. X-ray diffraction pattern indicates that the as-prepared films are polycrystalline in nature with exact matching of standard pattern. The composition and morphology are determined using energy dispersive X-ray analysis and scanning electron microscopy (SEM). The optical band gap, which is direct allowed, is 0.67 eV for Bi{sub 2}Se{sub 3} thin films and the activation energy is 53 meV. Tellurium doped thin films also show strong optical absorption corresponding to a band gap of 0.70-0.78 eV. Absolute value of electrical conductivity in the case of tellurium doped thin film shows a decreasing trend with respect to parent structure.

• OSTI ID: 20891572
• Journal Information: Materials Research Bulletin, Vol. 40, Issue 8; Other Information: DOI: 10.1016/j.materresbull.2005.04.012; PII: S0025-5408(05)00134-0; Copyright (c) 2005 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved; Country of input: International Atomic Energy Agency (IAEA); ISSN 0025-5408
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ABSORPTION
ACTIVATION ENERGY
BISMUTH SELENIDES
DOPED MATERIALS
ELECTRIC CONDUCTIVITY
EV RANGE 01-10
EVAPORATION
OPTICAL PROPERTIES
POLYCRYSTALS
SCANNING ELECTRON MICROSCOPY
TELLURIUM
THIN FILMS
X-RAY DIFFRACTION