Structural properties of indium tin oxide thin films prepared for application in solar cells
- Thin Film Laboratory, ECE Department, University of Tehran, Kargar Avenue, P.O. Box 14395/515, Tehran (Iran, Islamic Republic of) and Physics Department, Tarbiat Moallem University of Tehran, Mofateh Avenue, Tehran (Iran, Islamic Republic of)
- Thin Film Laboratory, ECE Department, University of Tehran, Kargar Avenue, P.O. Box 14395/515, Tehran (Iran, Islamic Republic of)
- Physics Department, Tarbiat Moallem University of Tehran, Mofateh Avenue, Tehran (Iran, Islamic Republic of)
- Central Branch, Azad University, Tehran (Iran, Islamic Republic of)
Indium tin oxide (ITO) thin films prepared by rf sputtering were annealed in several temperatures. The electrical, optical and structural properties of these films are systematically investigated. The post annealing of the samples lead to considerably higher electrical conductivity, better optical transparency and larger grain size for the films. In an optimum annealing temperature of 400 deg. C, we have found that a maximized conductivity of films is achieved without a remarkable loss in their transparency. The sheet resistance of 2.3 {omega}/{open_square} and average grain size of 30 nm, are the results of the optimized post processing of films. The investigation for microstructure of films investigated by X-ray diffraction measurement (XRD) shows that a preferential crystal growth toward the (2 2 2) orientation takes place when the annealing temperature increases to 400 deg. C.
- OSTI ID:
- 20891570
- Journal Information:
- Materials Research Bulletin, Vol. 40, Issue 8; Other Information: DOI: 10.1016/j.materresbull.2005.04.007; PII: S0025-5408(05)00119-4; Copyright (c) 2005 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved; Country of input: International Atomic Energy Agency (IAEA); ISSN 0025-5408
- Country of Publication:
- United States
- Language:
- English
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