Temperature-dependent barrier characteristics of swift heavy ion irradiated Au/n-Si Schottky structure

Journal Article · Fri Dec 01 00:00:00 EST 2006 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.2388855· OSTI ID:20884917

Kumar, Sandeep; Katharria, Y S; Kumar, Sugam; Kanjilal, D ^[1]

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1. Inter-University Accelerator Center, P. O. Box-10502, New Delhi 110067 (India)

The electrical behavior of Au/n-Si(100) structure, irradiated with 120 MeV {sup 107}Ag{sup 8+}, has been investigated in a wide temperature range (50-300 K). The forward bias current-voltage (I-V) and reverse bias capacitance-voltage (C-V) measurements have been used to extract the diode parameters. The variations in various parameters of the irradiated Schottky structure have been systematically studied as a function of temperature. It is found that the flatband barrier height is almost independent of the change in temperature. The ionized-donor concentration decreases while the ideality factor increases with decreasing temperatures. The behavior of Schottky parameters is explained by taking into account the role of the swift heavy ion irradiation induced defects at metal-semiconductor junction. The results are interpreted on the basis of recent models of Fermi level pinning.

• OSTI ID: 20884917
• Journal Information: Journal of Applied Physics, Vol. 100, Issue 11; Other Information: DOI: 10.1063/1.2388855; (c) 2006 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CAPACITANCE
ELECTRIC POTENTIAL
FERMI LEVEL
GOLD
HEAVY IONS
MULTICHARGED IONS
SCHOTTKY BARRIER DIODES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR MATERIALS
SILICON
SILVER 107 BEAMS
TEMPERATURE DEPENDENCE
TEMPERATURE RANGE 0013-0065 K
TEMPERATURE RANGE 0065-0273 K
TEMPERATURE RANGE 0273-0400 K