skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Stability of ion implanted single-walled carbon nanotubes: Thermogravimetric and Raman analysis

Journal Article · · Journal of Applied Physics
DOI:https://doi.org/10.1063/1.2353643· OSTI ID:20884744
; ; ; ; ;  [1]
  1. College of Nanoscale Science and Engineering, State University of New York, Albany, New York 12203 (United States)

In this work, the effect of different ions (hydrogen, helium, and neon) implanted on single-walled carbon nanotube (SWNT) is being analyzed using thermogravimetric analysis (TGA), Raman scattering, and x-ray photoelectron spectroscopy (XPS). The TGA result shows that the temperature for maximum decomposition rate (T{sub max}) increases at relatively low doses, i.e., by about 30 deg. C after hydrogen ion implantation (at the ion dose of 10{sup 15} cm{sup -2}), 17 deg. C after helium ion implantation (at the ion dose of 10{sup 13} cm{sup -2}), and contributes no significant enhancement after neon implantation for all doses. The increase of T{sub max} indicates that small mass ion can be utilized to improve the thermal-oxidative stability of SWNTs. Raman scattering and XPS were used to monitor the lattice damage from ion implantation and chemical bonding states of the materials. The results indicated the material rigidity for low doses of hydrogen and helium, while the application of higher doses of neon caused the material to transform towards amorphous carbon (a-C)

OSTI ID:
20884744
Journal Information:
Journal of Applied Physics, Vol. 100, Issue 6; Other Information: DOI: 10.1063/1.2353643; (c) 2006 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
Country of Publication:
United States
Language:
English

Similar Records

Blistering of implanted crystalline silicon by plasma hydrogenation investigated by Raman scattering spectroscopy
Journal Article · Fri Dec 15 00:00:00 EST 2006 · Journal of Applied Physics · OSTI ID:20884744

Raman scattering from MeV-ion implanted diamond
Journal Article · Fri Sep 15 00:00:00 EDT 1995 · Physical Review, B: Condensed Matter · OSTI ID:20884744

Raman scattering from ion-implanted diamond, graphite, and polymers
Journal Article · Wed Dec 01 00:00:00 EST 1993 · Physical Review, B: Condensed Matter; (United States) · OSTI ID:20884744